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| 1. general description the sa58632 is a two-channel audio amplifier in an hvqfn20 package. it provides power output of 2.2 w per channel with an 8 load at 9 v supply. the internal circuit is comprised of two btl (bridge-tied load) amplifiers with a complementary pnp-npn output stage and standby/mute logic. th e sa58632 is housed in a 20-pin hvqfn package, which has an exposed die attach paddle enabling reduced thermal resistance and increased power dissipation. 2. features ? low junction-to-ambient thermal resistance using exposed die attach paddle ? gain can be fixed with external resistors from 6 db to 30 db ? standby mode controlled by cmos-compatible levels ? low standby current < 10 a ? no switch-on/switch-off plops ? high power supply ripple re jection: 50 db minimum ? electrostatic discharge (esd) protection ? output short-circuit to ground protection ? thermal shutdown protection 3. applications ? professional and amateur mobile radio ? portable consumer products: toys and games ? personal computer remote speakers sa58632 2 2.2 w btl audio amplifier rev. 02 ? 4 march 2010 product data sheet
sa58632_2 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 4 march 2010 2 of 28 nxp semiconductors sa58632 2 2.2 w btl audio amplifier 4. quick reference data [1] with a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal to the dc output offset voltage divided by r l . [2] supply voltage ripple rejection is measured at the output with a source impedance of r s =0 at the input. the ripple voltage is a sine wave with a frequency of 1 khz and an amplitude of 100 mv (rms), which is applied to the positive supply rail. [3] supply voltage ripple rejection is measured at the output, with a source impedance of r s =0 at the input. the ripple voltage is a sine wave with a frequency between 100 hz and 20 khz and an amplitude of 100 mv (rms), which is applied to the positive supply rail. 5. ordering information table 1. quick reference data v cc =6v; t amb =25 c; r l =8 ; v mode = 0 v; measured in test circuit figure 3 ; unless otherwise specified. symbol parameter conditions min typ max unit v cc supply voltage operating 2.2 9 18 v i q quiescent current r l = ? [1] - 1522ma i stb standby current v mode =v cc --10 a p o output power thd+n = 10 % 1.2 1.5 - w thd+n = 0.5 % 0.9 1.1 - w thd+n = 10 %; v cc =9v -2.2-w thd+n total harmonic distortion-plus-noise p o = 0.5 w - 0.15 0.3 % psrr power supply rejection ratio [2] 50--db [3] 40--db table 2. ordering information type number package name description version SA58632BS hvqfn20 plastic thermal enhanced very thin quad flat package; no leads; 20 terminals; body 6 5 0.85 mm sot910-1 sa58632_2 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 4 march 2010 3 of 28 nxp semiconductors sa58632 2 2.2 w btl audio amplifier 6. block diagram fig 1. block diagram of sa58632 sa58632 v ccl outl ? inl+ inl ? rgnd outl+ 002aac078 15 14 r 20 k 20 k 16 standby/mute logic 1 7 r v ccl 17 v ccr 10 v ccr outr ? inr+ inr ? svr outr+ 12 13 r 20 k 20 k 3 11 standby/mute logic 6 r mode 2 btl/se 4 lgnd 20 gnd 18 gnd 19 gnd 9 gnd 8 n.c. 5 sa58632_2 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 4 march 2010 4 of 28 nxp semiconductors sa58632 2 2.2 w btl audio amplifier 7. pinning information 7.1 pinning 7.2 pin description [1] pins 8, 9, 18 and 19 are connected to the lead frame and also to the substrate. they may be kept floating. when connected to the ground plane, the pcb can be used as heatsink. fig 2. pin configuration for hvqfn20 002aac079 outr ? n.c. inr+ btl/se inl+ svr outl ? outl+ transparent top view 11 inr ? 12 inl ? 15 5 13 4 3 mode 2 outr+ 6 16 1 terminal 1 index area SA58632BS 14 v ccl gnd lgnd gnd 19 17 20 18 v ccr gnd rgnd gnd 8 10 7 9 table 3. pin description symbol pin description outl+ 1 positive loudspeaker terminal, left channel mode 2 operating mode select (standby, mute, operating) svr 3 half supply voltage, decoupling ripple rejection btl/se 4 btl loudspeaker or se headphone operation n.c. 5 not connected outr+ 6 positive loudspeaker terminal, right channel rgnd 7 ground, right channel gnd 8, 9, 18, 19 ground [1] v ccr 10 supply voltage; right channel outr ? 11 negative loudspeaker terminal, right channel inr ? 12 negative input, right channel inr + 13 positive input, right channel inl+ 14 positive input, left channel inl ? 15 negative input, left channel outl ? 16 negative output terminal, left channel v ccl 17 supply voltage, left channel lgnd 20 ground, left channel sa58632_2 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 4 march 2010 5 of 28 nxp semiconductors sa58632 2 2.2 w btl audio amplifier 8. functional description the sa58632 is a two-channel btl audi o amplifier capable of delivering 2 1.5 w output power to an 8 load at thd+n = 10 % using a 6 v power supply. it is also capable of delivering 2 2.2 w output power to an 8 load at thd+n = 10 % using a 9 v power supply. using the mode pin, the device can be switched to standby and mute condition. the device is protected by an internal ther mal shutdown protection mechanism. the gain can be set within a range of 6 db to 30 db by external feedback resistors. 8.1 power amplifier the power amplifier is a bridge-tied load (btl) amplifier with a complementary pnp-npn output stage. the voltage loss on the positive supply line is the saturation voltage of a pnp power transistor, on the negative side the saturation voltage of an npn power transistor. the total volt age loss is < 1 v. with a supply voltage of 6 v and an 8 loudspeaker, an output power of 1.5 w can be delivered to the load, and with a 9 v supply voltage and an 8 loudspeaker an output power of 2.2 w can be delivered. 8.2 mode select pin (mode) the device is in standby mode (with a very lo w current consumption) if the voltage at the mode pin is greater than v cc ? 0.5 v, or if this pin is floating. at a mode voltage in the range between 1.5 v and v cc ? 1.5 v the amplifier is in a mute condition. the mute condition is useful to suppress plop noise at the output, caused by charging of the input capacitor. the device is in active mode if the mode pin is grounded or less than 0.5 v (see figure 6 ). 8.3 btl/se output configuration to invoke the btl configuration (see figure 3 ), the btl/se pin is taken to logic high or not connected. the output differentially drives the speakers, so there is no need for coupling capacitors. the headphone can be connected to the amplifier negative outputs using a coupling capacitor for each channel. the headphone common ground is connected to the amplifier ground. to invoke the single-ended (se) configuration (see figure 15 ), the btl/se pin is taken to logic low or connected to ground. the positive outputs are muted with a dc level of 0.5v cc . using a coupling capacitor for each channel, speakers can be connected to the amplifier negative outputs. the speaker common ground is connected to the amplifier ground. headphones can be connected to t he negative outputs without using output coupling capacitors. the headphone common ground pin is connected to one of the amplifier positive output pins. sa58632_2 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 4 march 2010 6 of 28 nxp semiconductors sa58632 2 2.2 w btl audio amplifier 9. limiting values 10. thermal characteristics [1] thermal resistance is 22 k/w with dap soldered to 64.5 mm 2 (10 square inch), 1 ounce copper heat spreader. 11. static characteristics [1] with a load connected at the outputs the quiescent current wi ll increase, the maximum of this increase being equal to the dc output offset voltage divided by r l . table 4. limiting values in accordance with the absolute ma ximum rating system (iec 60134). symbol parameter conditions min max unit v cc supply voltage operating ? 0.3 +18 v v i input voltage ? 0.3 v cc +0.3 v i orm repetitive peak output current - 1 a t stg storage temperat ure non-operating ? 55 +150 c t amb ambient temperature operating ? 40 +85 c v p(sc) short-circuit supply voltage - 10 v p tot total power dissipation hvqfn20 - 2.2 w table 5. thermal characteristics symbol parameter conditions typ unit r th(j-a) thermal resistance from junction to ambient in free air 80 k/w 64.5 mm 2 (10 square inch) heat spreader [1] 22 k/w r th(j-sp) thermal resistance from junction to solder point 3 k/w table 6. static characteristics v cc =6v; t amb =25 c; r l =8 ; v mode = 0 v; measured in test circuit figure 3 ; unless otherwise specified. symbol parameter conditions min typ max unit v cc supply voltage operating 2.2 9 18 v i q quiescent current r l = ? [1] -1522ma i stb standby current v mode =v cc --10 a v o output voltage [2] -2.2-v v o(offset) differential output voltage offset - - 50 mv i ib input bias current pins inl+, inr+ - - 500 na pins inl ? , inr ? --500na v mode voltage on pin mode operating 0 - 0.5 v mute 1.5 - v cc ? 1.5 v standby v cc ? 0.5 - v cc v i mode current on pin mode 0 v < v mode sa58632_2 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 4 march 2010 8 of 28 nxp semiconductors sa58632 2 2.2 w btl audio amplifier 13. application information 13.1 btl application t amb =25 c, v cc = 9 v, f = 1 khz, r l =8 , g v = 20 db, audio band-pass 22 hz to 22 khz. the btl diagram is shown in figure 3 . pins 8, 9, 18 and 19 connected to ground. fig 3. application diagram of sa58632 bt l differential output configuration 002aac08 0 r2 50 k sa58632 outl ? inl+ inl ? gnd svr outl+ mode 7 15 14 3 2 16 1 17 c3 47 f r1 1 f v il r l 100 f 100 nf v cc 20 10 r4 50 k outr ? inr+ inr ? outr+ 12 13 11 6 r3 1 f v ir r l outr ? btl/se 4 10 k 10 k gain left 2 r2 r1 ------ - = gain right 2 r4 r3 ------ - = sa58632_2 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 4 march 2010 9 of 28 nxp semiconductors sa58632 2 2.2 w btl audio amplifier 14. test information 14.1 static characterization the quiescent current has been measured without any load impedance ( figure 4 ). figure 6 shows three areas: operating, mute and standby. it shows that the dc switching levels of the mute and standby respective ly depends on the supply voltage level. r l = ? band-pass = 22 hz to 22 khz. (1) v cc =3v. (2) v cc =5v. (3) v cc =12v. fig 4. i q versus v cc fig 5. v o versus v mode fig 6. v mode versus v cc 10 20 30 i q (ma) 0 v cc (v) 020 16 812 4 002aac081 002aac089 v mode (v) 10 ? 1 10 2 10 1 v o (v) 10 ? 6 10 ? 5 10 ? 4 10 ? 3 10 ? 2 1 10 ? 1 10 (1) (3) (2) 0 12 8 4 16 v mode (v) v cc (v) 016 12 48 002aac090 mute standby operating sa58632_2 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 4 march 2010 10 of 28 nxp semiconductors sa58632 2 2.2 w btl audio amplifier 14.2 btl dynamic characterization the total harmonic distortion-plus-noise (thd+n) as a functi on of frequency ( figure 7 ) was measured with a low-pass filter of 80 khz. the value of capacitor c2 influences the behavior of psrr at low frequencies; in creasing the value of c2 increases the performance of psrr. p o = 0.5 w; g v =20db. (1) v cc =6v; r l =8 . (2) v cc = 7.5 v; r l =16 . v cc =6v; v o =2v; r l =8 . (1) g v =30db. (2) g v =20db. (3) g v =6db. fig 7. thd+n versus frequency fig 8. channel separation versus frequency v cc =6v; r s =0 ; v ripple =100mv. (1) g v =30db. (2) g v =20db. (3) g v =6db. fig 9. psrr versus frequency 002aac083 f (hz) 10 10 5 10 4 10 2 10 3 1 10 ? 1 10 thd+n (%) 10 ? 2 (1) (2) 002aac084 f (hz) 10 10 5 10 4 10 2 10 3 ? 100 ? 70 ? 80 ? 90 ? 60 cs (db) (1) (2) (3) 002aac085 f (hz) 10 10 5 10 4 10 2 10 3 ? 60 ? 40 ? 20 psrr (db) ? 80 (1) (2) (3) sa58632_2 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 4 march 2010 11 of 28 nxp semiconductors sa58632 2 2.2 w btl audio amplifier 14.3 thermal behavior the measured thermal performance of the hvqf n20 package is highly dependent on the configuration and size of the heat spreader on the application demo board. data may not be comparable between different semiconductors manufacturers because the application demo boards and test methods are not stan dardized. also, the thermal performance of packages for a specific application may be di fferent than presented here, because of the configuration of the copper heat spreader of the application boards may be significantly different. nxp semiconductors uses fr-4 type applic ation boards with 1 ounce copper traces with solder coating. the demo board (see figure 23 ) has a 1 ounce copper heat spreader that runs under the ic and provides a mounting pad to solder to the die attach paddle of the hvqfn20 package. the heat spreader is symmetrical a nd provides a heat spreader on both top and bottom of the pcb. the heat spreader on top and bottom side of the demo board is connected through 2 mm diameter plated through holes. directly under the dap (die attach paddle), the top and bo ttom side of the pcb are connected by four vias. the total top and bottom heat spreader area is 64.5 mm 2 (10 in 2 ). the junction to ambien t thermal resistance, r th(j-a) = 22 k/w for the hvqfn20 package when the exposed die attach paddle is soldered to 5 square inch area of 1 ounce copper heat spreader on the demo pcb. the maximum sine wave power dissipation for t amb =25 c is given in equation 1 : (1) thus, for t amb =60 c the maximum total power dissipation is given in equation 2 : (2) the power dissipation versus ambient temperature curve ( figure 10 ) shows the power derating profiles with ambient temperature for three sizes of heat spreaders. for a more modest heat spreader using 5 square inch area on the top or bottom side of the pcb, the r th(j-a) is 31 k/w. when the package is not soldered to a heat spreader, the r th(j-a) increases to 60 k/w. 150 25 ? 22 -------------------- - 5.7 w = 150 60 ? 22 -------------------- - 4.1 w = sa58632_2 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 4 march 2010 12 of 28 nxp semiconductors sa58632 2 2.2 w btl audio amplifier the characteristics curves ( figure 11 a and figure 11 b, figure 12 , figure 13 a and figure 13 b, and figure 14 ) show the room temperature performance for sa58632 using the demo pcb shown in figure 23 . for example, figure 11 ? power dissipation versus output power ? (a and b) show the performance as a function of load resistance and supply voltage. worst case power dissipation is shown in figure 12 . figure 13 a shows that the part delivers typically 2.8 w per channel for thd+n = 10 % using 8 load at 9 v supply, while figure 13 b shows that the part delivers 3.3 w per channel at 12 v supply and 16 load, thd+n = 10 %. (1) 64.5 mm 2 heat spreader top and bottom (1 ounce copper). (2) 32.3 mm 2 heat spreader top or bottom (1 ounce copper). (3) no heat spreader. fig 10. power dissipation versus ambient temperature 2 4 6 p (w) 0 t amb ( c) 0 160 120 40 80 002aac283 (1) (3) (2) sa58632_2 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 4 march 2010 13 of 28 nxp semiconductors sa58632 2 2.2 w btl audio amplifier (1) v cc =6v. (2) v cc =7.5v. (3) v cc =9v. (1) v cc =6v. (2) v cc =7.5v. (3) v cc =9v. (4) v cc =12v. a. r l =8 ; f = 1 khz; g v =20db b. r l =16 ; f = 1 khz; g v =20db fig 11. power dissipation versus output power p o (w) 03 2 1 002aac288 1 2 3 p (w) 0 (1) (2) (3) 1 2 3 p (w) 0 p o (w) 04 3 12 002aac289 (1) (2) (3) (4) (1) r l =4 . (2) r l =8 . (3) r l =16 . fig 12. worst case power dissipation versus v cc 002aac287 v cc (v) 012 8 4 0 3 2 1 4 p o (w) (1) (2) (3) sa58632_2 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 4 march 2010 14 of 28 nxp semiconductors sa58632 2 2.2 w btl audio amplifier (1) v cc =6v. (2) v cc =7.5v. (3) v cc =9v. (1) v cc =6v. (2) v cc =7.5v. (3) v cc =9v. (4) v cc =12v. a. r l =8 ; f = 1 khz; g v =20db b. r l =16 ; f = 1 khz; g v =20db fig 13. thd+n versus output power 002aac284 p o (w) 10 ? 2 10 1 10 ? 2 1 10 10 2 thd+n (%) 10 ? 3 (1) (2) (3) 002aac285 p o (w) 10 ? 3 10 1 10 ? 2 10 ? 2 1 10 10 2 thd+n (%) 10 ? 3 (1) (2) (3) (4) thd+n = 10 %; f = 1 khz; g v =20db. (1) r l =4 . (2) r l =8 . (3) r l =16 . fig 14. output power versus v cc 002aac286 v cc (v) 012 8 4 0 3 2 1 4 p o (w) (1) (2) (3) sa58632_2 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 4 march 2010 15 of 28 nxp semiconductors sa58632 2 2.2 w btl audio amplifier 14.4 single-ended application t amb = 25 c; v cc = 7.5 v; f = 1 khz; r l =8 ; g v = 20 db; audio band-pass 20 hz to 20 khz. the single-ended application diagram is shown in figure 15 . if the btl/se pin is to ground, the positiv e outputs (outl+, outr+) will be in mute condition with a dc level of 0.5v cc . when a headphone is used (r l >25 ) the se headphone application can be used without coupling capacitors by placing the load between negative output and one of the posi tive outputs (for example, pin 1) as the common pin. increasing the value of the tantalum or elec trolytic capacitor c3 will result in a better channel separation. because the positive out put is not designed for high output current (2 i o ) at the load impedance (< 16 ), the se application with output capacitors connected to ground is advised. the capacito r value of c4/c5 in combination with the load impedance determines the low frequency behavior. the total harmonic distortion-plus-noise as a function of fr equency was measured with a low-pass filter of 80 khz. the value of the capacitor c3 influences the behavior of the psrr at low frequencies; increasing the value of c3 increases the performance of psrr. pins 8, 9, 18 and 19 connected to ground. fig 15. se application circuit configuration 002aac091 r2 100 k sa58632 outl ? inl+ inl ? gnd svr outl+ mode 7 15 14 3 2 16 1 17 c3 47 f r1 1 f v il 100 f 100 nf v cc 20 10 r4 100 k outr ? inr+ inr ? outr+ 12 13 11 6 r3 1 f v ir r l = 8 outr ? btl/se 4 10 k 10 k r l = 8 c4 470 f c5 470 f gain left r2 r1 ------ - = gain right r4 r3 ------ - = sa58632_2 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 4 march 2010 16 of 28 nxp semiconductors sa58632 2 2.2 w btl audio amplifier (1) v cc =7.5v. (2) v cc =9v. (3) v cc =12v. (1) v cc =9v. (2) v cc =12v. (3) v cc =15v. a. r l =4 ; f = 1 khz; g v =10db b. r l =8 ; f = 1 khz; g v =10db (1) v cc =9v. (2) v cc =12v. (3) v cc =15v. c. r l =16 ; f = 1 khz; g v =10db fig 16. thd+n versus output power 002aac290 p o (w) 10 ? 2 10 1 10 ? 1 10 ? 1 1 10 10 2 thd+n (%) 10 ? 2 (1) (2) (3) p o (w) 10 ? 2 10 1 10 ? 1 002aac291 1 10 ? 1 10 thd+n (%) 10 ? 2 (1) (2) (3) 002aac292 p o (w) 10 ? 2 10 1 10 ? 1 10 ? 1 1 10 10 2 thd+n (%) 10 ? 2 (1) (2) (3) sa58632_2 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 4 march 2010 17 of 28 nxp semiconductors sa58632 2 2.2 w btl audio amplifier p o = 0.5 w; g v =20db. (1) v cc = 7.5 v; r l =4 . (2) v cc =9v; r l =8 . (3) v cc =12v; r l =16 . v o =1v; g v =20db. (1) v cc =5v; r l =32 , to buffer. (2) v cc = 7.5 v; r l =4 . (3) v cc =9v; r l =8 . (4) v cc =12v; r l =16 . (5) v cc =5v; r l =32 . fig 17. thd+n versus frequency fig 18. channel separation versus frequency r s =0 ; v ripple = 100 mv. (1) g v =24db. (2) g v =20db. (3) g v =0db. thd+n = 10 %. (1) r l =4 . (2) r l =8 . (3) r l =16 . fig 19. psrr versus frequency fig 20. p o versus v cc 002aac093 f (hz) 10 10 5 10 4 10 2 10 3 1 10 ? 1 10 thd+n (%) 10 ? 2 (1) (2) (3) 002aac094 f (hz) 10 10 5 10 4 10 2 10 3 ? 100 ? 40 ? 60 ? 80 ? 20 cs (db) (1) (2) (3) (4) (5) 002aac095 f (hz) 10 10 5 10 4 10 2 10 3 ? 60 ? 40 ? 20 psrr (db) ? 80 (1) (2) (3) 0.8 1.2 0.4 1.6 2.0 p o (w) 0 v cc (v) 016 12 48 002aac096 (3) (2) (1) sa58632_2 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 4 march 2010 18 of 28 nxp semiconductors sa58632 2 2.2 w btl audio amplifier thd+n = 10 %. (1) r l =4 . (2) r l =8 . (3) r l =16 . fig 21. worst case power dissipation versus v cc 0 3 2 1 4 p (w) v cc (v) 016 12 48 002aac097 (1) (2) (3) sa58632_2 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 4 march 2010 19 of 28 nxp semiconductors sa58632 2 2.2 w btl audio amplifier 14.5 general remarks the frequency characteristics can be adapted by connecting a small capacitor across the feedback resistor. to improve the immunity of hf radiation in radio circuit applications, a small capacitor can be connected in pa rallel with the feedback resistor (56 k ); this creates a low-pass filter. 14.6 SA58632BS pcb demo the application demo board may be used for eval uation in either btl or se configuration as shown in the schematics in figure 3 and figure 15 . the demo pcb is laid out for a 64.5 mm 2 (10 in 2 ) heat spreader (total of top and bottom heat spreader area). (1) v cc =7.5v. (2) v cc =9v. (3) v cc =12v. (1) v cc =9v. (2) v cc =12v. (3) v cc =15v. a. r l =4 ; f = 1 khz; g v =10db b. r l =8 ; f = 1 khz; g v =10db (1) v cc =9v. (2) v cc =12v. (3) v cc =15v. c. r l =16 ; f = 1 khz; g v =10db fig 22. power dissipation versus output power 1 2 3 p (w) 0 p o (w) 0 1.6 1.2 0.4 0.8 002aac293 (1) (2) (3) p o (w) 0 2.4 1.6 0.8 002aac294 1 2 3 p (w) 0 (1) (2) (3) 0 1.2 0.8 0.4 1.6 p (w) p o (w) 0 1.6 1.2 0.4 0.8 002aac295 (1) (2) (3) xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx sa58632_2 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 4 march 2010 20 of 28 nxp semiconductors sa58632 2 2.2 w btl audio amplifier fig 23. SA58632BS pcb demo 001aae32 7 SA58632BS rev5 audio amplifier outl+ outr+ gnd vcc gnd gnd vcc outl ? inl ? inr ? outr ? vcc/2 mode gnd sel vcc btl/se 10 k 10 k 56 k 56 k 11 k 11 k 1 f 47 f 1 f 1 f 1 f 100 f sa58632_2 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 4 march 2010 21 of 28 nxp semiconductors sa58632 2 2.2 w btl audio amplifier 15. package outline fig 24. package outline sot910-1 (hvqfn20) references outline version european projection issue date iec jedec jeita sot910-1 sot910- 1 05-10-11 mo-220 - - - - - - note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included unit a max mm 1 0.05 0.00 0.4 0.3 5.1 4.9 3.15 2.85 6.1 5.9 4.15 3.85 0.65 0.40 a 1 dimensions (mm are the original dimensions) h vqfn20: plastic thermal enhanced very thin quad flat package; no leads; 2 0 terminals; body 6 x 5 x 0.85 mm terminal 1 index area b c 0.2 d d h e e h e 0.8 e 1 e 2 l v 0.1 w 0.05 y 0.05 2.4 4 y 1 0.1 0 2.5 5 mm scale c y c y 1 x b e 2 e 1 e e 1/2 e a c b v m c w m 6 1 11 16 20 17 710 e h d h 1/2 e b a d e l detail x a c a 1 terminal 1 index area sa58632_2 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 4 march 2010 22 of 28 nxp semiconductors sa58632 2 2.2 w btl audio amplifier 16. soldering of smd packages this text provides a very brief insight into a complex technology. a more in-depth account of soldering ics can be found in application note an10365 ?surface mount reflow soldering description? . 16.1 introduction to soldering soldering is one of the most common methods through which packages are attached to printed circuit boards (pcbs), to form electr ical circuits. the soldered joint provides both the mechanical and the electrical connection. th ere is no single sold ering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mount devices (smds) are mixed on one printed wiring board; however, it is not suitable for fine pitch smds. reflow soldering is ideal for the small pitches and high densities that come with increased miniaturization. 16.2 wave and reflow soldering wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. the wave soldering process is suitable for the following: ? through-hole components ? leaded or leadless smds, which are glued to the surface of the printed circuit board not all smds can be wave soldered. packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. also, leaded smds with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased pr obability of bridging. the reflow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature profile. leaded packages, packages with solder balls, and leadless packages are all reflow solderable. key characteristics in both wave and reflow soldering are: ? board specifications, in cluding the board finish , solder masks and vias ? package footprints, including solder thieves and orientation ? the moisture sensitivit y level of the packages ? package placement ? inspection and repair ? lead-free soldering versus snpb soldering 16.3 wave soldering key characteristics in wave soldering are: ? process issues, such as application of adhe sive and flux, clinching of leads, board transport, the solder wave parameters, and the time during which components are exposed to the wave ? solder bath specifications, including temperature and impurities sa58632_2 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 4 march 2010 23 of 28 nxp semiconductors sa58632 2 2.2 w btl audio amplifier 16.4 reflow soldering key characteristics in reflow soldering are: ? lead-free versus snpb solderi ng; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see figure 25 ) than a snpb process, thus reducing the process window ? solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board ? reflow temperature profile; this profile includ es preheat, reflow (in which the board is heated to the peak temperature) and coolin g down. it is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). in addition, the peak temperature must be low enough that the packages and/or boards are not damaged. the peak temperature of the package depends on package thickness and volume and is classified in accordance with ta b l e 8 and 9 moisture sensitivity precautions, as indicat ed on the packing, must be respected at all times. studies have shown that small packages reach higher temperatures during reflow soldering, see figure 25 . table 8. snpb eutectic process (from j-std-020c) package thickness (mm) package reflow temperature ( c) volume (mm 3 ) < 350 350 < 2.5 235 220 2.5 220 220 table 9. lead-free process (from j-std-020c) package thickness (mm) package reflow temperature ( c) volume (mm 3 ) < 350 350 to 2000 > 2000 < 1.6 260 260 260 1.6 to 2.5 260 250 245 > 2.5 250 245 245 sa58632_2 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 4 march 2010 24 of 28 nxp semiconductors sa58632 2 2.2 w btl audio amplifier for further information on temperature profiles, refer to application note an10365 ?surface mount reflow soldering description? . 17. abbreviations msl: moisture sensitivity level fig 25. temperature profiles for large and small components 001aac84 4 temperature time minimum peak temperature = minimum soldering temperature maximum peak temperature = msl limit, damage level peak temperature table 10. abbreviations acronym description btl bridge-tied load cmos complementary metal oxide semiconductor dap die attach paddle esd electrostatic discharge npn negative-positive-negative pcb printed-circuit board pnp positive-negative-positive rms root mean squared se single-ended thd total harmonic distortion sa58632_2 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 4 march 2010 25 of 28 nxp semiconductors sa58632 2 2.2 w btl audio amplifier 18. revision history table 11. revision history document id release date data sheet status change notice supersedes sa58632_2 20100304 product data sheet - sa58632_1 modifications: ? the format of this data sheet has been redesigned to comply with the new identity guidelines of nxp semiconductors. ? legal texts have been adapted to the new company name where appropriate. ? table 6 ? static characteristics ? : min. value for v i(btl) changed from ?2 v? to ?0.42 v cc ?. sa58632_1 20060627 product data sheet - - sa58632_2 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 4 march 2010 26 of 28 nxp semiconductors sa58632 2 2.2 w btl audio amplifier 19. legal information 19.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 19.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 19.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer?s third party customer(s) (hereinafter both referred to as ?application?). it is customer?s sole responsibility to check whether the nxp semiconductors product is suitable and fit for the application planned. customer has to do all necessary testing for the application in order to avoid a default of the application and the product. nxp semiconducto rs does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicond uctors product is au tomotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification. sa58632_2 ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 4 march 2010 27 of 28 nxp semiconductors sa58632 2 2.2 w btl audio amplifier in the event that customer uses t he product for design-in and use in automotive applications to automotive s pecifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully in demnifies nxp semi conductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. 19.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 20. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com nxp semiconductors sa58632 2 2.2 w btl audio amplifier ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 4 march 2010 document identifier: sa58632_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 21. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 quick reference data . . . . . . . . . . . . . . . . . . . . . 2 5 ordering information . . . . . . . . . . . . . . . . . . . . . 2 6 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 pinning information . . . . . . . . . . . . . . . . . . . . . . 4 7.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 functional description . . . . . . . . . . . . . . . . . . . 5 8.1 power amplifier . . . . . . . . . . . . . . . . . . . . . . . . . 5 8.2 mode select pin (mode) . . . . . . . . . . . . . . . . . 5 8.3 btl/se output configuration. . . . . . . . . . . . . . . 5 9 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 6 10 thermal characteristics . . . . . . . . . . . . . . . . . . 6 11 static characteristics. . . . . . . . . . . . . . . . . . . . . 6 12 dynamic characteristics . . . . . . . . . . . . . . . . . . 7 13 application information. . . . . . . . . . . . . . . . . . . 8 13.1 btl application . . . . . . . . . . . . . . . . . . . . . . . . . 8 14 test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 14.1 static characterization. . . . . . . . . . . . . . . . . . . . 9 14.2 btl dynamic characterization . . . . . . . . . . . . 10 14.3 thermal behavior . . . . . . . . . . . . . . . . . . . . . . 11 14.4 single-ended application . . . . . . . . . . . . . . . . 15 14.5 general remarks . . . . . . . . . . . . . . . . . . . . . . . 19 14.6 SA58632BS pcb demo . . . . . . . . . . . . . . . . . 19 15 package outline . . . . . . . . . . . . . . . . . . . . . . . . 21 16 soldering of smd packages . . . . . . . . . . . . . . 22 16.1 introduction to soldering . . . . . . . . . . . . . . . . . 22 16.2 wave and reflow soldering . . . . . . . . . . . . . . . 22 16.3 wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 22 16.4 reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 23 17 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 24 18 revision history . . . . . . . . . . . . . . . . . . . . . . . . 25 19 legal information. . . . . . . . . . . . . . . . . . . . . . . 26 19.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 26 19.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 19.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 19.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 27 20 contact information. . . . . . . . . . . . . . . . . . . . . 27 21 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 |
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